完成flash对结构体的读写

DEV/flash.c

@@ -0,0 +1,90 @@
+#include "flash.h"
+
+#include "stm32f10x.h"
+#include <string.h>
+
+
+
+typedef struct {
+    uint32_t version;      // 序号/标志位
+    uint32_t write_count;
+    uint32_t error_count;
+    float temperature;
+    uint32_t crc32;        // 最后一个成员：CRC校验
+} FlashData_t;
+
+
+
+// 最后一页页号（从0开始）
+#define FLASH_PAGE_NUM     63
+
+// 每页大小
+#define FLASH_PAGE_SIZE    1024
+
+// Flash起始地址
+#define FLASH_BASE_ADDR    0x08000000
+
+// 最后一页的地址
+#define FLASH_LAST_PAGE_ADDR  (FLASH_BASE_ADDR + FLASH_PAGE_NUM * FLASH_PAGE_SIZE)
+// 即：0x08000000 + 63 * 1024 = 0x0800FC00
+
+
+#define FLASH_TARGET_ADDR  ((uint32_t)FLASH_LAST_PAGE_ADDR)  // 最后1KB起始地址
+
+
+
+// 擦除对应页（1KB）
+void Flash_ErasePage(uint32_t page_addr) {
+    FLASH_Unlock();
+    FLASH_ClearFlag(FLASH_FLAG_EOP | FLASH_FLAG_PGERR | FLASH_FLAG_WRPRTERR);
+    FLASH_ErasePage(page_addr);
+    FLASH_Lock();
+}
+
+// 写入结构体到 Flash（页擦除+按字写入）
+void Flash_WriteStruct(uint32_t addr, void* data, uint16_t size) {
+    uint16_t i;
+    uint32_t* pData = (uint32_t*)data;
+
+    FLASH_Unlock();
+    FLASH_ClearFlag(FLASH_FLAG_EOP | FLASH_FLAG_PGERR | FLASH_FLAG_WRPRTERR);
+    FLASH_ErasePage(addr);  // 注意：必须按页擦除
+
+    for (i = 0; i < (size + 3) / 4; i++) {  // 以 4 字节为单位写入
+        FLASH_ProgramWord(addr + i * 4, pData[i]);
+    }
+
+    FLASH_Lock();
+}
+
+// 从 Flash 读取结构体
+void Flash_ReadStruct(uint32_t addr, void* data, uint16_t size) {
+    memcpy(data, (void*)addr, size);
+}
+FlashData_t readData;
+
+
+
+
+void flash_Test(){
+	
+			FlashData_t myData = {
+				.write_count = 123,
+				.error_count = 456,
+				.temperature = 36.5f
+		};
+
+		FlashData_t readData;
+
+		// 写入结构体
+		Flash_WriteStruct(FLASH_TARGET_ADDR, &myData, sizeof(FlashData_t));
+
+		// 读取结构体
+		Flash_ReadStruct(FLASH_TARGET_ADDR, &readData,sizeof(FlashData_t));
+
+	
+	
+
+
+
+}